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We demonstrate polarization-insensitive holographic Huygens' metasurfaces based on silicon resonant meta-atoms capable of complex wavefront control at telecommunication wavelengths. We achieve over 82% transmittance efficiencies, with further optimization suggesting the efficiency exceeding 90%.
Silicon nanodisks support both electric and magnetic resonances, which can be tuned independently via their geometry. We utilize these engineered resonances and demonstrate dielectric metasurfaces for efficient shaping of the emission spectra of quantum dots.
We measure near-field distributions of Mie-type optical modes of silicon nanodisks using apertureless near-field optical microscopy. Excellent agreement with numerical predictions is obtained, further enabling multipole analysis of the observed modes.
We characterize experimentally the nonlinear optical response of silicon nanodisk oligomers using third-harmonic generation spectroscopy and reveal the contributions of magnetic and electric dipolar resonances, local field enhancement, and nonlinear interference.
We spectrally overlap the magnetic and electric resonances in all-dielectric silicon nanodisk arrays by tuning the disk aspect ratio. This offers new opportunities for functional metasurfaces and conceptually new all-dielectric unidirectional nanoantennas.
Tellurium dielectric resonator metamaterials were fabricated using a newly developed multi-cycle deposition-etch process. Deposition and etching of Tellurium were studied in detail. All the samples showed two transmission minima corresponding to magnetic and electric dipole resonances.
Silicon and silicon-germanium heterostructure devices are interesting test beds for exploring solid-state quantum computing. Electron spin lifetimes and coherence times in fully relaxed SiGe / strained Si (sSi) quantum well devices are much longer than competing systems (e.g. gallium- arsenide heterostructures), with further improvements expected. Additionally, highly crystalline and high mobility...
Si has emerged as a promising material platform for solid-state quantum computation. Si/SiGe epitaxial technologies have enabled atomically smooth interfaces which lead to boosted two- dimensional electron mobility over conventional Si metal-oxide-semiconductor field-effect transistors (FETs). Enhancement-mode Si/SiGe heterostructures, which do not contain intentional dopants, provide electrons an...
Back‐contact silicon solar cells feature high efficiencies, simpler module assembly, and improved aesthetics. The emitter wrap through (EWT) cell structure is particularly attractive for use with industrial processing (e.g., screen‐printed metallization) and common solar‐grade p‐type Si materials. We report development of a high‐efficiency EWT back‐contact cell using p‐type Cz silicon and only industrial...
Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages including the elimination of grid shadowing losses, reduced cost by use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing method for interconnecting and stringing edge-connected back contact cells is acceptably straight-forward and reliable, there are...
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