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The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.
We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350 mA. Using optimized taper configuration, the beam divergence and the coupling losses are reduced down to 18degtimes22deg and ~ 3 dB, respectively. It opens the way to...
Polarisation insensitive injection locking of two-section Fabry-Perot laser diodes is demonstrated, allowing to achieve error free transmission through 50 km over 20 nm at 2.5 Gb/s.
A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
We demonstrate ∼590 fs pulse generation at a 245 GHz repetition rate using a one-section Fabry-Perot quantum-dash-based laser. A time-bandwidth product of 0.41 and average output power in excess of 20 mW are achieved.
More than 120 nm of -3 dB optical bandwidth, together with 10 dB of internal gain at 50degC, are demonstrated and explained with specially designed quantum dot semiconductor optical amplifiers.
Electrical spectrum line-width is reduced in mode-locked FP 1.55 mum-QD laser diode through optical confinement factor optimization. From optimized structures, we obtained nearly Fourier-transform limited pulses at 10 GHz, with an averaged width of 8 ps over 10 nm.
We demonstrate ~590 fs pulse generation at a 245 GHz repetition rate using a one-section Fabry-Perot quantum-dash-based laser. A time-bandwidth product of 0.41 and average output power in excess of 20 mW are achieved.
We demonstrate tunable semiconductor lasers based on three coupled photonic crystal sections, that allows up to 18 nm tuning range with a side-mode suppression ratio greater than 35 dB.
We experimentally demonstrate simultaneous guided and vertical laser emission at room temperature in an optically pumped two dimensional InP-based deep etched photonic crystal.
Single mode lasing of square lattice photonic crystal (PhC) waveguides is investigated experimentally and compared to simulation results. Lasing of a Wl PhC waveguide structure at 1.5 /spl mu/m on InP substrate is reported for the first time.
We experimentally demonstrate simultaneous guided and vertical laser emission at room temperature in an optically pumped two dimensional InP-based deep etched photonic crystal
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