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We discuss measurement of the nonlinear-optical properties of Si-wire waveguides and the design of these wires for use in on-chip waveguide applications.
We measure signal degradation from interchannel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks.
We present the first experimental demonstration of error-free (bit error rates < 10-12) transmission of a 300-Gbps WDM data stream through a 2-cm-long silicon photonic wire using 24 C-band channels, each modulated at 12.5 Gbps.
We present the first full theoretical study of femtosecond pulse propagation in silicon wires. Dispersion effects up to the third order, Kerr nonlinearity, intrinsic losses, free carrier and two-photon absorption effects are included.
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