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We demonstrated directly modulated telecom-band sub-wavelength (diameter ∼114 nm) nanowire lasers on silicon photonic crystal for the first time. The dynamic properties were estimated using a photon counting system. A 10Gb/s opened eye-diagram was obtained.
We demonstrated an InAsP/InP nanowire laser (diameter ∼100 nm) in telecommunication band on an Si photonic crystal platform. By measuring light-in versus light-out curves, linewidth, emission rate, and photon correlation, lasing oscillation has been unambiguously demonstrated.
By adopting high β buried-multiple-quantum-well photonic crystal nanocavities, we have demonstrated smooth lasing operation, which indicates thresholdless-like lasing theoretically predicted, by mean of light-in versus light-out curve analysis, linewidth analysis, and photon correlation measurements.
We propose a new design for buried heterostructure photonic crystal nanocavity lasers with in-line coupled output waveguides and coupling buffer regions. This design enables us to realize single-mode lasing and a high output power for a current-injected nanolaser.
We have developed an electrically driven photonic-crystal nanocavity laser with an ultra-low threshold current and a high temperature characteristic. Lasing is achieved under continuous-wave operation at high temperatures of up to 95°C.
We have successfully developed an electrically driven photonic-crystal nanocavity laser. Thanks to the development of an ultra-compact embedded active-region structure, a record low threshold current and energy needed for transferring a single bit are achieved.
We demonstrate an electrically driven photonic-crystal nanocavity laser with an InAlAs sacrificial layer. The laser exhibits an ultralow threshold current of 7.8 μA and an energy cost of 14 fJ/bit with 12.5-Gbit/s direct modulation.
We demonstrate on-chip optical interconnects consisting of integrated photonic crystal (PhC) lasers and photodetectors. Current-blocking trenches effectively reduce the leakage current in the two-dimensional PhC slab, resulting in ultralow operating energy of 17.3 fJ/bit.
We successfully increase the output power of an electrically driven photonic crystal laser. By using a six-quantum-well structure and decreasing the series resistance, the device, having 32-μA threshold current, exhibits 39.3-μW output power. We also demonstrate bit-error rate measurements with 10-Gbit/s signal without using optical amplifier.
An electrically driven photonic-crystal nanocavity laser with a buried heterostructure exhibits a record low threshold current of 14 µA at 25°C. High-temperature operation up to 95°C is achieved by using the InGaAlAs-based multiple-quantum-well active region.
The on-chip integration of all-optical random-access memories based on a photonic crystal nanocavity was achieved. Their ultralow power consumption, small footprint, and 40-Gb/s optical signal capability might be beneficial for future optical packet processing.
An all-optical random-access memory with an ultralow power consumption of 30 nW was achieved by using a photonic crystal nanocavity. Integrated o-RAM chip operation for 4-bit, 40-Gb/s signal was also demonstrated for the first time.
We have developed an electrically pumped photonic-crystal nanocavity laser, operating at room temperature. Employing an ultracompact embedded active region, the direct modulation is achieved at 10-Gbit/s with ultra-low operating energy. It opens up a novel application area for lasers, namely the optical interconnects for computercom.
Linewidth of buried heterostructure photonic crystal nanolaser are studied in terms of output power. We report a linewidth of 143.5 MHz and it is the narrowest linewidth ever reported for photonic crystal based lasers.
It has been over two decades since 3D photonic band gaps were proposed to strongly confine light in a small space [1], but the proposed strong light confinement was achieved just recently in a slightly different form. Recent progress in nano-fabrication technologies enabled high-quality 2D photonic crystals, and various high-Q microcavities have been now realized in them. Among these photonic crystals...
The authors review their recent studies on various nanophotonic devices including all-optical switches, optical memories, electro-optic modulators, photo-detectors and lasers, all of which are based on photonic crystal (PhC) nanocavities. The strong light confinement achieved in PhC nanocavities has enabled these devices with ultrasmall footprint and ultralow power/energy consumption. These characteristics...
We demonstrate an all-optical memory based on photonic crystal nanocavities with novel buried heterostructure, which solves the heating problem and enhances the carrier confinement, enabling long memory-time operation with sub-μW power consumption.
Recently, photonic crystals have enabled a variety of ultrasmall photonic devices with extremely small energy consumption of ∼fJ/bit level, suggesting that we can integrate a vast number of nanophotonic devices in a single chip. This technology may give us a way to introduce high-speed integrated nanophotonics in an information chip, which will be crucial in future ICT.
An ultracompact buried heterostructure photonic crystal nanocavity laser exhibits a small energy cost of 8.76 fJ/bit with 20-Gbit/s modulation by optical pumping. The maximum output power in waveguide and the external differential quantum efficiency are -10.3 dBm and 53%, respectively.
We demonstrate a Fano scheme consisting of ultrasmall photonic crystal nanocavities, and observe the asymmetric transmission spectrum. All-optical switching with a 1 fJ pump energy and an 18 ps time window is also successfully estimated.
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