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The modeling of ESD devices, such as MOS transistors, under ESD stress and bias conditions is reviewed. A practical macro-modeling approach composed of industry standard BJT and MOS compact models is presented. SPICE-type circuit level simulations that uses these models is demonstrated. These include examples at both the I/O cell as well as full-chip levels. Predicting ESD circuit performance as well...
SCRs have been playing an increasingly significant role in ESD protection for CMOS technologies. A major challenge is to develop effective compact simulation models for these devices valid under ESD stress conditions. A simple macro modeling approach is presented for SPICE simulation of LVTSCR devices. The method uses advanced standard BJT and MOS models such as BSIM4 and Mextram. The simulation results...
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