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For the first time, a 40nm-node, 2x logic density, 3.8x operation speed, and 3x power efficient, nonvolatile programmable logic (NPL) is demonstrated by using Cu atom switch for configuration switches. The switching characteristics of the atom switch are kept in scaling down to 64/32nm device area, and an improved PSE reduces set voltage while keeping low leakage current, enabling core transistors...
A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor...
A non-volatile programmable logic (NPL) with atom switch significantly accelerates performance of micro-controller unit. A low-power 32bit-CPU using a 65 nm-node Silicon-on-Thin-Box (SOTB) CMOS performs 1.95 DMIPS/MHz and 33 μW/MHz on 25 MHz and VDD=0.4V. When a software process in the CPU is offloaded to NPL, the 9 times faster processing speed and 3 times higher energy efficiency are realized. A...
A non-volatile programmable logic (NPL) with atom switch significantly accelerates performance of micro-controller unit. A low-power 32bit-CPU using a 65 nm-node Silicon-on-Thin-Box (SOTB) CMOS performs 1.95 DMIPS/MHz and 33 µW/MHz on 25 MHz and VDD=0.4V. When a software process in the CPU is offloaded to NPL, the 9 times faster processing speed and 3 times higher energy efficiency are realized. A...
A ternary content-addressable memory (TCAM)-based hardware called nonvolatile “multi-functional CAM (MF-CAM)” is proposed for an ultra-low-energy “full-text search” system in recent data centers. The proposed nonvolatile MF-CAM-based full-text search engine can perform parallel comparison while eliminating leakage energy by hierarchical power gating. By the massively parallel comparison with the hierarchical...
A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, ??NanoBridge??, has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 ??. A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus...
A solid-electrolyte switch (ldquoNanoBridgerdquo) has been successfully embedded into a 0.13-mum-node dual-damascene Cu interconnect using a highly reliable bilayer solid-electrolyte (TaSiO/Ta2O5) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (> 109) at a low ON resistance of 50Omega. The newly developed bilayer solid-electrolyte has improved the thermal stability during...
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