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RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning FEM integration on silicon [1]. In this quest, SOI technology has already emerged as a promising one enabling the integration of low cost antenna switches [2]. Clearly,...
Since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning front end module (FEM) integration on silicon. In this quest, SOI technology has emerged as the technology of choice since the antenna switch and the power amplifier (PA) have been successfully integrated on SOI. In this paper, we will focus our investigation...
RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning FEM integration on silicon. In this quest, SOI technology has already addressed two key blocks, the antenna switch and the power amplifier. In this paper, we will focus...
SOI technology is now emerging as a promising one for the integration of RF front-end modules, mainly for antenna switches and power amplifiers (PAs). This paper reviews the performances of STMicroelectronics 0.13 mum High Resistivity (HR) SOI CMOS technology and discusses the potentiallity for SOI technology to capture RF front-end business in the near future.
This paper presents high-Q and high current on-chip inductors integrated in a six copper metal level radio frequency (RF) back end of line (BEOL), including two 3 mum thick top metallizations, in an advanced high resistivity (HR) SOI CMOS technology. Inductors achieved on HR SOI CMOS technology using this optimized RF BEOL are reported, compared with standard BEOL, and firstly benchmarked with current...
During past years, high resistivity (HR) SOI CMOS technology has emerged as a promising one for the integration of RF applications, mainly because of the improvement of passive component related to HR substrate. In this trend, 3D symmetrical spiral inductor (3DSI) has been proposed on SOI to lower the amount of area consumed by inductor while offering comparable performance than equivalent bulk technology...
In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of resistivity homogeneity all over the wafer, of 300 mm wafer provided by SOITEC and to offer a benchmarking with well known 200 mm material. For this...
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