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We have investigated finite element method (FEM) modeling of thermal stress analysis in a SiC power module using sintering Ag die-attach, and explored the reliability focusing on the initial cracking point caused by the thermal stress. The analysis results by FEM models support our experimental observations in the reliability tests of the fabricated modules, confirming that using direct-bonded-copper...
Ag sinter die-attach is utilized for bonding SiC Schottky-barrier diode (SBD) dies on Cu lead frames metalized by Ni/Pd/Pt/Ag electroless plating. After Al wiring, the assembled structure was mold-packaged by imide-based high temperature thermosetting resin. The produced devices are then subjected to environmental tests of high temperature storage at 250°C, and of thermal cycling between −50°C and...
In terms of die-attach for high TJ device, metallization on the backside of the bare chip and the substrate surface affect the high-temperature reliability of the joint due to the accelerated atomic diffusions. We evaluated two types of electroless plated metallization schemes which are Ni/Ag and Ni/Pd/Pt/Ag, respectively. High temperature storage of 250 °C for 500 h was used to test the high temperature...
The mechanical properties of sintered porous Ag-paste are investigated by tension test and shear test in the temperature range from 25 °C to 300°C. Stress-strain curves of sintered porous Ag-paste are measured at different temperatures. The Poisson's ratio, which is calculated by Young's modulus and shear modulus, decreased from 0.31 at 25 °C to 0.11 at 300 °C. In addition, 3D finite element model...
Low temperature and low pressure sintering Ag paste composed by sub-micro Ag particle and organic solvent was presented. The apparent improvement of bonding strength was realized by adding small amount of nano thickness Ag flake. Optimum proportion of sub-micro particle and nano thickness flake was determined. Nano-SiC particles were added into the optimized paste for sake of the possibility of properties...
Pressure-less sintering of Cu flake paste is achieved assisted by hydrogen plasma process toward die-attach technique of next-generation high-temperature power semiconductor devices. The sintered paste shows high bond strength aver 50 MPa, showing large abnormal grain growth at the bonding interface, with homogeneously distributed void of porous interconnection layer. Our results indicate that still...
Pure Zn exhibits excellent properties for high temperature lead-free solder such as the high melting point (419.5°C), surpassing tensile strength, high thermal and electrical conductivity, in addition to the reasonable cost. However, the brittleness and oxidation of pure Zn can potentially cause a reliability problem, when it is employed at high operation temperature expected for SiC power devices...
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