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With the rapid development of the wide bandgap (WBG) power transistor technology, the latest Silicon-Carbide and Gallium-Nitride (SiC and GaN) based power transistors can be used as the main switches in the medium power (≥10 kW) conversion systems. Electrical signal based efficiency measurement could be very challenging due to the high-frequency output signals and the high power to loss ratio. In...
With the rapid development of wide bandgap power transistor technology, the latest gallium-nitride based power transistors are able to be used as the main switches in the high power (≥10 kW) conversion systems. In order to achieve the desired high efficiency and higher power density successfully, the entire GaN based power conversion system needs to take multiple considerations into the design stage...
The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing...
This paper presents an overview of the latest Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology. The latest development and challenges of 30 V to 650 V GaN HEMTs are summarized. The evaluation methodology of the GaN HEMT is presented, including static characterization and dynamic characterization. The paper also demonstrates the application of GaN HEMTs developed by Center for...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
A full-bridge current-source isolated dc/dc converter for Photovoltaic applications is proposed in this paper. The converter utilizes a Quasi-Switched-Capacitor circuit as the secondary side, which features a reduced number of switches and voltage stresses, and an additional boost function. Through the proposed control algorithm, soft-switching can be realized for all switches. A 1.2 kW, 1 MHz, 40...
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