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Paralleling devices is an effective way to achieve a higher power application while still having the convenience of using discrete devices. However, the mechanisms of potential failures and the circuit design considerations have not been thoroughly studied yet, when paralleling gallium nitride high-electron-mobility transistors (GaN HEMTs) in cascode configuration. This paper presents a comprehensive...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
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