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The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS structure...
High-voltage (HV) metal-oxide-semiconductor field-effect transistors (MOSFETs) of the laterally diffused metal-oxide-semiconductor (LDMOS) type enable applications over a wide range of bias voltages by optimizing the combined structure of MOSFET and drift region at its drain side. We report a physically accurate compact resistor model of the LDMOS drift region, adapted to the special requirements...
The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several 100 V switching capability. Accurate scaling properties for channel and drift-region length as well...
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