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We have developed a silane-free atmospheric-pressure plasma Si deposition process and investigated the properties of the deposited films by fabricating strain gauge type pressure sensors for the first time. The Si deposition process, which is known as plasma-enhanced chemical transport, utilizes the temperature difference between the solid Si source and the substrate in atmospheric hydrogen plasma...
In this study, the counting rate performance of a newly developed Compton camera for biological and medical applications was investigated; further, the sensitivity profile of this highly complicated imaging system was measured using 22Na and 18F point gamma-ray sources. 22Na was used to assess the imaging ability of this camera against the point source, and the intense 18F point source of 200 MBq...
In this paper, we report the estimations of the lower detection limits of gamma ray energy for a newly developed Compton camera for applications to nuclear medicine imaging. We performed simulation studies to investigate the relationship of the distance between the scatterer and absorber detectors with the lower detection limit. In addition, imaging tests were performed by using multiple sources.
The characteristics of light-emissive nonvolatile memory based on nanocrystalline Si are dramatically improved by complete surface passivation with high-quality tunnel oxides. Electrically or optically stored information can be read out as either electrical or optical signal.
We developed a new bulk strained Si/SiGe CMOS technology free from any Ge-related problems, which has a 90- to 110-nm strained Si layer thicker than the limit at which misfit dislocations occur and a new shallow-trench isolation (STI) structure that has a selective-epitaxial-Si (SES) layer to cover up the SiGe trench surface. This technology has advantages in process compatibility with Si CMOS because...
We developed a new bulk strained-Si/SiGe CMOS technology free from any Ge-related problems, which has a 90-110-nm strained-Si layer thicker than the limit at which misfit-dislocations occur, and a new shallow-trench isolation structure that has a selective-epitaxial Si layer to cover up the SiGe trench surface. This process has advantages in manufacturing compatibility with Si-CMOS process, low junction...
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