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On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0002)...
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy...
This paper describes an ADC architecture termed pseudo-flash ADC and intended for biomedical sensing applications. It features high conversion speed which is the same as that of flash ADC, but has significantly lower hardware implementation overhead. Designed in a 0.18-mum standard CMOS technology in accordance with a specification of 250 KSamples/s and 6-bit resolution, the proposed ADC architecture...
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