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On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0002)...
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy...
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