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In this study, the crystallinity of electroplated copper thin-film interconnections on Cu and Ru seed layers before and after EM (Electro migration) test was evaluated by an EBSD (Electron Back-scattered Diffraction). The EM resistance of the interconnection on the Ru seed layer was improved drastically compared with that on the Cu one. EBSD analyses revealed that the crystallinity of the interconnection...
The degradation process of the crystallographic quality of copper thin films, which are used for interconnections and micro bumps for 3D integration, during electromigration and stress-induced migration tests is dominated by the diffusion along grain boundaries and the diffusion constant of copper varies drastically depending on the crystallinity of the films. The degradation process was visualized...
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