Search results for: D.K. Sadana

Items from 1 to 20 out of 26 results

article

Genetic analysis of river, swamp and hybrid buffaloes of north‐east India throw new light on phylogeography of water buffalo (Bubalus bubalis)

B.P. Mishra, P.K. Dubey, B. Prakash, P. Kathiravan, more

Journal of Animal Breeding and Genetics > 132 > 6 > 454 - 466

This study analysed buffaloes from north‐east India and compared their nuclear and mitochondrial DNA variations with buffaloes of mainland India, China, Mediterranean and South‐East Asia. Microsatellite genotypes of 338 buffaloes including 210 from six north‐east Indian buffalo populations and three mainland Indian breeds were analysed to evaluate their genetic structure and evolutionary relationships...

article

Population structure and phylogeography of Toda buffalo in Nilgiris throw light on possible origin of aboriginal Toda tribe of South India

P. Kathiravan, R.S. Kataria, B.P. Mishra, P.K. Dubey, more

Journal of Animal Breeding and Genetics > 128 > 4 > 295 - 304

We report the genetic structure and evolutionary relationship of the endangered Toda buffalo of Nilgiris in South India with Kanarese and two other riverine buffalo breeds. The upgma phylogeny drawn using Nei’s distance grouped South Kanara and Toda buffaloes at a single node while Marathwada and Murrah together formed a separate node. Principal component analysis was performed with pairwise interindividual...

article

New opportunities for SiGe and Ge channel p-FETs

S.W. Bedell, N. Daval, A. Khakifirooz, P. Kulkarni, more

Microelectronic Engineering > 2011 > 88 > 4 > 324-330

A thin body (fully depleted) strained SGOI device structure (FDSGOI), and a strained SiGe channel layer on SOI, were fabricated using scaled high-κ gate dielectrics and metal gate technology. The uniaxial strain effect and corresponding drive current enhancement reported by Irisawa et al. [1] for narrow-width devices was investigated on these structures. Although the strained FDSGOI device structure...

article

Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates

S.W. Bedell, T.N. Adam, A. Turansky, D.K. Sadana

Journal of Crystal Growth > 2011 > 316 > 1 > 101-105

A commercially available 300mm single-wafer UHV-CVD reactor was used to grow strained pseudomorphic Si _0.79 Ge _0.21 layers beyond the critical thickness on Si substrates. A unique in situ method of introducing controlled amounts of oxygen at the growth interface, combined with a very sensitive defect etching technique, was used to study the crystal defects present in the strained SiGe...

article

Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor

T.N. Adam, S. Bedell, A. Reznicek, D.K. Sadana, more

Journal of Crystal Growth > 2010 > 312 > 23 > 3473-3478

Epitaxial (100) silicon layers were grown at temperatures ranging from 500 to 800°C in a commercial cold-wall type UHV/CVD reactor at pressures less than 7×10 ⁻⁵ Torr. The substrates were 300mm SIMOX SOI wafers and spectroscopic ellipsometry was used to assess growth rates and deposition uniformities. High-resolution atomic force microscopy (AFM) was employed to verify the atomic terrace configuration...

article

Phenotypic identification of farm animal genetic resources using computer learning with scoring function

Avnish K. Bhatia, Anand Jain, D.K. Sadana, S.B. Gokhale, more

Computers and Electronics in Agriculture > 2010 > 73 > 1 > 37-43

A precise identification of a given animal as belonging to a given breed is essential for livestock census, and developing policies for selection, improvement and conservation of animal genetic resources. It consists of assigning animals to a breed on the basis of certain phenotypic traits and basically forms a classification problem. Existing computer learning algorithms require a learning data set...

article

Microsatellite based genetic structuring reveals unique identity of Banni among river buffaloes of Western India

B.P. Mishra, R.S. Kataria, P. Kathiravan, K.P. Singh, more

Livestock Science > 2010 > 127 > 2-3 > 257-261

Genetic structure of Banni buffaloes vis-à-vis four other river buffalo breeds of Western India was assessed using short tandem repeat markers. The total number of alleles varied between 115 and 127 across five buffalo breeds. The mean estimates of global F-statistics over all loci were 0.330 for F _IT , 0.145 for F _ST and 0.216 for F _IS respectively. Analysis of molecular variance...

chapter

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, more

2009 IEEE International Electron Devices Meeting (IEDM) > 1 - 4

2009 IEEE International Electron Devices Meeting (IEDM 2009)

We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced...

chapter

High mobility III–V channel MOSFETs for post-Si CMOS applications

Yanning Sun, E.W. Kiewra, J.P. De Souza, S.J. Koester, more

2009 IEEE International Conference on IC Design and Technology > 161 - 164

2009 IEEE International Conference on IC Design and Technology (ICICDT)

III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 muA/mum and transconductance of 793 muS/mum have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V...

article

Evaluation of genetic architecture and mutation drift equilibrium of Marathwada buffalo population in Central India

P. Kathiravan, B.P. Mishra, R.S. Kataria, D.K. Sadana

Livestock Science > 2009 > 121 > 2-3 > 288-293

In the present study, microsatellite data on 24 loci were generated and utilized to evaluate the genetic architecture and mutation drift equilibrium of Marathwada buffaloes, a Central Indian population maintained under low input system. Sufficient allelic diversity was observed with a total of 109 alleles across different loci. The genetic diversity analysis of Marathwada buffaloes displayed moderate...

article

High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High- $\kappa$ Gate Dielectrics and $\alpha$ -Si Passivation

Y. Sun, E.W. Kiewra, J.P. de Souza, J.J. Bucchignano, more

IEEE Electron Device Letters > 2009 > 30 > 1 > 5 - 7

Long and short buried-channel In_0.7Ga_0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm²/ V middots. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 muA/mum at Vg - Vt = 1.6 V and peak transconductance of 715 muS/mum. In addition, the virtual...

chapter

Scaling of In_0.7Ga_0.3As buried-channel MOSFETs

Yanning Sun, E.W. Kiewra, J.P. de Souza, J.J. Bucchignano, more

2008 IEEE International Electron Devices Meeting > 1 - 4

IEDM 2008. IEEE International Electron Devices Meeting

Sub-100 nm short-channel In_0.7Ga_0.3As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 muA/mum and record transconductance of 793 muS/mum have been achieved. Scaling behavior is investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual...

chapter

DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs

S.W. Bedell, A. Majumdar, K.A. Jenkins, J.A. Ott, more

2008 Device Research Conference > 45 - 46

2008 66th Annual Device Research Conference (DRC)

In this paper, the fabrication and characterization of strained Ge-on-insulator transistors with gate lengths down to 65 nm is described and also, for the first time, RF characteristics of sub-100-nm gate-length Ge MOSFET are reported. It is concluded that considerable further improvement is possible in both the performance and the short-channel characteristics by increasing the strain in the channel,...

chapter

Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

M. Hamaguchi, H. Yin, K.L. Saenger, C.Y. Sung, more

2008 Symposium on VLSI Technology > 178 - 179

2008 Symposium on VLSI Technology

Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-current improvement is obtained for thin DSB PFETs at long channel (L_g= 2 mum), 10% higher at short channel (L_g = 36 nm) compared to (110) bulk PFETs. Moreover,...

chapter

High Performance Long-and Short-Channel In_0.7Ga_0.3As-channel MOSFETs

Yanning Sun, E.W. Kiewra, J.P. de Souza, J.J. Bucchignano, more

2008 Device Research Conference > 41 - 42

2008 66th Annual Device Research Conference (DRC)

In conclusion, we have demonstrated long and short-channel In_0.7Ga_0.3As MOSFETs with and without alpha-Si passivation. Devices with alpha-Si show much higher transonductance and effective peak mobility of 3810 cm²/Vs. These results indicates that the alpha-Si layer has successfully passivated the III-V surface. Short-channel MOSFETs with gate length of 160 nm display record current of 825 mA/mm and...

chapter

Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology

Haizhou Yin, M. Hamaguchi, K.L. Saenger, C.Y. Sung, more

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) > 34 - 35

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage depending on their locations relative to device structures. A wide range of EOR defect depths are investigated. Shallow-implant-induced EOR defects (~100 nm) are found to minimize junction leakages due to EOR defects being outside of junction depletion...

article

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

S.W. Bedell, A. Majumdar, J.A. Ott, J. Arnold, more

IEEE Electron Device Letters > 2008 > 29 > 7 > 811 - 813

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel...

chapter

Scalability of Direct Silicon Bonded (DSB) Technology for 32nm Node and Beyond

Haizhou Yin, C.Y. Sung, K.L. Saenger, M. Hamaguchi, more

2007 IEEE Symposium on VLSI Technology > 222 - 223

2007 IEEE Symposium on VLSI Technology

Direct Silicon Bonded (DSB) technology is shown to be scalable for 32nm node and beyond for two integration schemes: Solid Phase Epitaxy (SPE)-before-Shallow Trench Isolation (STI) and STI-before-SPE. For SPE-before-STI, 32nm node ground rules can be met by thinning DSB thickness to 70nm, which ensures complete removal of boundary defects by STI. For STI-before-SPE, a scaling-independent solution...

article

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

Y. Sun, E.W. Kiewra, S.J. Koester, N. Ruiz, more

IEEE Electron Device Letters > 2007 > 28 > 6 > 473 - 475

The operation of long- and short-channel enhancement-mode In_0.7Ga_0.3As-channel MOSFETs with high-k gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 mum, the long-channel devices have V_t= +0.25 V, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 +/ - 0.3 nm, and a peak effective mobility of 1100...

chapter

Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS

Haizhou Yin, C.Y. Sung, H. Ng, K.L. Saenger, more

2006 International Electron Devices Meeting > 1 - 4

2006 International Electron Devices Meeting

Two integration schemes for hybrid crystal orientation technology using direct silicon bonded (DSB) substrates and solid phase epitaxy (SPE) processes have been implemented. The shallow-trench-isolation (STI) before SPE approach suffers from trench-edge defects formed at STI edges, which causes high leakage current. The SPE-before-STI approach allows removal of edge defects of SPE by STI. SRAM in...

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Search results for: D.K. Sadana

Genetic analysis of river, swamp and hybrid buffaloes of north‐east India throw new light on phylogeography of water buffalo (Bubalus bubalis)

Population structure and phylogeography of Toda buffalo in Nilgiris throw light on possible origin of aboriginal Toda tribe of South India

New opportunities for SiGe and Ge channel p-FETs

Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates

Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor

Phenotypic identification of farm animal genetic resources using computer learning with scoring function

Microsatellite based genetic structuring reveals unique identity of Banni among river buffaloes of Western India

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

High mobility III–V channel MOSFETs for post-Si CMOS applications

Evaluation of genetic architecture and mutation drift equilibrium of Marathwada buffalo population in Central India

High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High- $\kappa$ Gate Dielectrics and $\alpha$ -Si Passivation

Scaling of In_0.7Ga_0.3As buried-channel MOSFETs

DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs

Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

High Performance Long-and Short-Channel In_0.7Ga_0.3As-channel MOSFETs

Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

Scalability of Direct Silicon Bonded (DSB) Technology for 32nm Node and Beyond

Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS

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