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The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is...
Degradation of device characteristics as a presage of the 'stuck to SET' failure of a long-cycled phase change memory device was investigated to illuminate its cause and to propose a novel programming method that can cure the problem for an extended device life time. From the finding that the degraded RESET characteristics could be cured by reverse RESET current pulses, field-induced atomic migration...
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