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In the manufacturing process of advanced node semiconductor devices, germanium tetrafluoride (GeF4) gas is used for pre-amorphization implantation (PAI) of the silicon crystal structure. This germanium implant is required for controlling channeling and reducing Transient Enhanced Diffusion (TED) for better ultra-shallow junction formation. Fluoride gases, including GeF4, have a long history of poor...
The advent of new technologies is driving the emergence of alternative doping methods. For instance, plasma doping is potentially a critical enabler for three-dimensional (3D) devices in the integrated circuit (IC) market, requiring flow rates much higher than those of traditional planar structures. Unlike traditional beam-line ion implantation, dopants are typically not introduced from an on-board...
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF4) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF4 by easy fragmentation of the molecule, as well...
This paper presents a topology for improving the low frequency performance of pyramidal radar absorbing materials at oblique angles of incidence. The technique uses an embedded frequency selective surface as an impedance matching layer and improves the −40dB reflectivity limit from 6GHz to 4GHz for 102mm pyramidal absorber. The frequency selective surface is based on a resistively loaded dipole FSS...
Composite materials containing nanoparticulate PEDOT in a polymer electrolyte matrix containing either a Cu–Cu 2+ or Fe 2+ –Fe 3+ redox couples show rapid and reversible decreases of up to 500-fold in their electrical and microwave impedances when small DC or AC electric fields are applied across coaxial line and strip samples from their edges, which are much larger than microparticulate...
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