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In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
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