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Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O2+N2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed...
We demonstrates a complete Technology CAD (TCAD) methodology that addresses the manufacturing challenges posed by rising technological complexity, increasing process variability and shrinking time-to-market windows. Using TCAD simulations as input, Process Compact Models are created to enable efficient analysis of complex and multivariate process-device relationships, with applications to enhancing...
Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.
The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time.
In this paper, we demonstrate for the first time via technology computer aided design (TCAD), the enhancement in both the ac and dc performances for process-induced strained-Si MOSFETs over bulk-Si and a comparison of process-induced strained and substrate-induced strained-Si MOSFETs. In addition, we present the hot-electron degradation characteristics for strained-Si n-MOSFETs fabricated in both...
Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films.<<ETX>>
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