The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigate a novel Ti Chemical Vapor Deposition (CVD Ti) technique for source/drain and trench contact silicidation. This work is a first demonstration of a highly selective, superconformal Ti process that exhibits a low p-type CVD Ti/SiGe:B contact resistivity (pc) down to 2.1×10−9 Ω.cm2 (a 40% reduction vs. PVD Ti), matching the lowest published values [1-5]. A competitive n-type CVD Ti/Si:P...
Thin film copper membranes on silicon substrates were constructed using micromachining techniques. Membranes were used as flexible ground planes beneath a microstrip transmission line. Actuation of membranes induced phase shift in the transmitted signal. Membranes possessed radial surface corrugations 10 μm deep to increase their flexibility. Membranes were released using a combination of KOH and...
The existing Ancillary Services (AS) in the Electric Reliability Council of Texas (ERCOT), Texas Independent System Operator (ISO), were developed in the late 1990s based on inherent characteristics of conventional synchronous generation in the grid. ERCOT system and its generation mix have undergone significant changes over the past two decades. Therefore ERCOT staff and stakeholders are currently...
We report a record setting low NMOS contact Rc of 2e−9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e−9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity...
Spacecraft orbiting below about 1200 km are exposed to a high flux of atomic oxygen (AO) that can severely degrade surface materials. An Electron Cyclotron Resonance (ECR) based system was used to simulate LEO conditions. The ECR source was characterized by Kapton dosimetry and in-situ four point probe silver film resistively measurements. The VUV output was measured by a calibrated VUV spectrometer...
The current-voltage and noise characteristics of bridging silicon wires have been measured at room temperature. From the linear current-voltage characteristics the bulk and contact resistance contributions are extracted and modeled. The excess noise observed at low frequencies is interpreted in terms of bulk and contact noise contributions, with the former comparable, in terms of Hooge parameter values,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.