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In this paper a measurement methodology, using a two-dimensional electron gas (2DEG) resistor, is used to evaluate the dispersion of three different type of buffers, namely a step graded buffer, a buffer with low temperature (LT) AlN interlayers and a superlattice buffer. Together with a dedicated Design of Experiments (DOE), these measurements allowed us to identify the physical origin of the dispersion...
The analysis of high frequency parameters of pseudomorphic HEMTs (PM-HEMT) at cryogenic temperatures and different gate lengths 0.1??m to 0.7??m, compared to existing modeling data, points out the improvement of average carrier velocity transport at low temperatures, the larger relative importance of certain parasitic effects (lateral diffusion under the gate, fringe effects, electrostatic capacitances)...
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