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This paper investigates the transport properties of the silicon-germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy level, and channel current computation. Coupled Poisson's equation to Schrodinger's equation for electrostatics calculation and electron structure to current transport equation for channel current computation,...
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in the paper. The model is obtained from solving Poisson equation rigorously together with the drain current formulation equivalent to Pao-Sahpsilas double integral previously proposed for long-charnel bulk MOSFETs. The model gives a fully self-consistent physical description for the channel potential, charge and...
Carbon nanotubes have a high electrochemically accessible area of porous tubes, good electronic conductance and strong mechanical property. These properties essentially suggest that CNTs are attractive materials for the construction of nanoscaled biosensors. Ligand frameworks such as the Schiff base containing salen ligand, that can be sterically and electronically modified with ease, are very attractive...
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in the paper. The model is obtained from rigorously solving Poisson equation together with the drain-current formulation equivalent to Pao-Sah's double integral that is previously proposed for long-channel bulk MOSFETs. The model consists of an analytic drain-current equation that accounts for both drift and diffusion...
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