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In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like $I$ –$V$ characteristics with a selectivity of more than $10^{7}$ . This volatile PMC can be changed to a bipolar resistive memory switch if the...
Gate controlled tunnel junctions wherein the PN-junction like potential profile is made by two gates with opposite polarities are currently dominant in the fabrication of 2D material devices. Electrical doping methods are also preferred in tunnel field-effect transistors (TFETs) as chemical doping introduces states within the bandgap of the semiconductor and therefore degrades the OFF-state performance...
Implantable biomedical devices are typically battery operated. Therefore they normally have stringent constrains on power consumption and size. This paper presents a low power 64-point, 16-bit fixed-point Fast Fourier Transform(FFT) processor design. Bit-serial logic was used in the design to achieve low power while maintain sufficient performance for biomedical applications. The proposed FFT design...
A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology [5] has been optimized for density, low power and wide dynamic range. 70 nm gate pitch, 52 nm metal pitch and 0.0499 um2 HDC SRAM cells are the most aggressive design rules reported for 14/16 nm node SoC process to achieve Moore's Law 2x density scaling over 22 nm node. High performance NMOS/PMOS...
A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology [5] has been optimized for density, low power and wide dynamic range. 70 nm gate pitch, 52 nm metal pitch and 0.0499 um2 HDC SRAM cells are the most aggressive design rules reported for 14/16 nm node SoC process to achieve Moore's Law 2x density scaling over 22 nm node. High performance NMOS/PMOS...
In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the...
We rely on our mobile devices for an almost comically long list of functions: talking, texting, Web surfing, navigating, listening to music, taking photos, watching and making videos. Already, smartphones monitor blood pressure, pulse rate, and oxygen concentration, and before long, they'll be measuring and reporting air-pollutant concentrations and checking whether food is safe to eat. And yet we...
A zero-cost embedded high density MTP NVM with extensive statistical verification is presented. The family of compact single Poly modules ranging from 64 bit to 64 kbit is based on the Y-Flash concept, employing original array architectures and implemented in standard and power management (PM) 0.18 μm CMOS process flows. No special HV devices or additional masks are employed. Excellent reliability...
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