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In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image...
We report the first demonstration of scaled Ge p-channel FinFET devices fabricated on a Si bulk FinFET baseline using the Aspect-Ratio-Trapping (ART) technique [1]. Excellent subthreshold characteristics (long-channel subthreshold swing SS=76mV/dec at 0.5V), good SCE control and high transconductance (1.2 mS/μm at 1V, 1.05 mS/μm at 0.5V) are achieved. The Ge FinFET presented in this work exhibits...
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