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A 64 Mb spin-transfer-torque MRAM in 65 nm CMOS is developed. A 47 mm2 die uses a 0.3584 ??m2 cell with a perpendicular-TMR device. To achieve read-disturb immunity for the reference cell, a clamped-reference scheme is adopted. An adequate-reference scheme is implemented to suppress read-margin degradation due to the resistance variation of reference cells.
A comprehensive statistical model of the switching probability was proposed for a 1 Gb spin transfer torque magneto resistive random access memory (STT-MRAM). Since the switching current varies with every write cycle owing to the thermal instability, the read disturbance and the write error are critical issues in the STT-MRAM. In this paper, the operating condition of read and write was designed so...
Epitaxial thin films for a cubic manganate (La,Sr)MnO 3 and for a layer-structured (La,Sr) 3 Mn 2 O 7 have been grown by sputtering on SrTiO 3 (100) for the use as electrodes in polarized-spin injection experiments to the (La,Sr) 2 CuO 4 high T c superconductor. (La,Sr)MnO 3 thin films show a sufficiently smooth surface with optimal...
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