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Silicon-based photonics has generated a strong interest in recent years, mainly for optical telecommunications and optical interconnects in microelectronic circuits. The main rationales of silicon photonics are the reduction of photonic system costs and the increase of the number of functionalities on the same integrated chip by combining photonics and electronics. In this paper, we will present recent...
This paper reports on high speed Ge photodetectors integrated in Si waveguides which present very low dark current (25nA @-1V). 40Gbit/s operation under zero bias was reported at a wavelength of 1.55μm.
Experimental results of a silicon modulator based on carrier depletion in a PIPIN diode integrated in a Mach-Zehnder interferometer, are presented. At 40 Gbit/s, the modulator exhibits 6.6 dB extinction ratio and 6 dB optical loss.
Silicon modulator based on interdigitated PN junctions integrated in a ring resonator is experimentally demonstrated, showing a 4 dB Extinction Ratio at 10 Gbit/s.
We report recent experimental results of two kinds of photodetectors developed in the framework of the European project HELIOS: InAlAs-InGaAs metal-semiconductor-metal photodetectors and germanium photodetectors.
The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally...
High speed, high responsivity and reliable CMOS compatible photodetectors are key elements for low cost telecommunications systems at 1.55 mum. A 42 GHz germanium on silicon vertical PIN photodetector integrated in SOI waveguide is presented.
We present a fiber-based 2-port THz electro-optic sampling system at 1.55 mum wavelength, including an ultrafast In0.53Ga0.47As photoconductive switch and a freely positionable prismatic electro-optic probe. Frequency components are extended up to 2 THz and the dynamic range is larger than 40 dB regardless of the direction of the electromagnetic wave propagating in the waveguide thanks to the 2-port...
Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.
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