The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV...
A new Si/Ge/Si heterojunction based waveguide photodetector has been demonstrated in order to reduce the fabrication cost, increase the responsivity, and improve process robustness. State of the art characteristics in terms of dark current, responsivity and bandwidth have been obtained. Furthermore, such photodetectors were characterized in avalanche mode in order to improve the sensitivity and reduce...
Silicon photonics is becoming a technology of choice for optical communications. Compatibility with cmos manufacturing process is one key of success since it allows taking advantage of the production capacities of foundries; i.e. big volume and low cost manufacturability [1]. Germanium is the ideal candidate to build the integrated high performance photodiodes needed for receiver circuits [2]. Meanwhile,...
Silicon is the mainstream material in the electronic industry and it is rapidly expanding its dominance into the field of photonics. Indeed, silicon photonics has been the subject of intense research activities to pave the way for next generation of energy-efficient high-speed computing, information processing and communications systems. The trend is to use optics in intimate proximity to the electronic...
Silicon-based photonics has generated a strong interest in the last years, mainly for optical telecommunications and optical interconnects in microelectronic circuits and industrial breakthroughs have been even performed by companies like IBM, Luxtera, INTEL, and ST Microelectronics. The main future rationales are the reduction of photonic system costs, the increase of the number of functionalities...
Silicon-based photonics has generated a strong interest in recent years, mainly for optical telecommunications and optical interconnects in microelectronic circuits. The main rationales of silicon photonics are the reduction of photonic system costs and the increase of the number of functionalities on the same integrated chip by combining photonics and electronics. In this paper, we will present recent...
We report performances of active and passive devices in a Silicon-Photonic library on a 300mm-CMOS-platform, showing highly uniform behavior of passive WDM devices, Mach-Zehnder modulators and germanium photo-detectors with state of the art performances.
A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than −20 dBm at 109 GHz.
This paper reports on high speed Ge photodetectors integrated in Si waveguides which present very low dark current (25nA @-1V). 40Gbit/s operation under zero bias was reported at a wavelength of 1.55μm.
A 200GHz 16 channel receiver with polarization management was obtained with a 2D grating coupler, 2xAWGs and 16 Ge photodiodes. PDL was below 1dB, BW above 20GHz, receiver sensitivity in the order of 0.08 A/W.
40Gbit/s optical modulators based on carrier depletion effect and germanium photodetectors integrated in silicon waveguides have been demonstrated at a wavelength of 1.55µm.
Porous materials such as ultra low-k dielectrics are commonly used in micro and nano technologies. Since porosity leads to an increased sensitivity of the material to etching and post-etching plasma processes, porosity, pore size and surface modifications need to be assessed during material integration. In this work, the recently developed Scatterometric Porosimetry technique using a porosimetry acquisition...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.