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Today, a new trend in wafer level packaging is to add more than one die in the same package and, sometimes, to use the third dimension in order to: Decrease the form factor of the final system; Improve the thermal and electrical performances of the device; Decrease the cost of the final product. In order to stack the heterogeneous components in the third dimension, TSV (through silicon vias) is a...
The challenges of 3-D integration are its sophisticated processes that require deposition, etching, bumping, plating, thinning, etc., which drive the need for wafer bonding materials that can sustain the high temperatures and chemically stringent environments found in these processes. This paper presents the development of a novel polymer material to be used as a wafer bonding material suitable for...
Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization. To stack wafers, reliable through-silicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives...
Making reliable through-die interconnects for three-dimensional (3-D) wafer stacking technologies requires a reduction in wafer thickness combined with a larger wafer diameter, which in turn requires new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives are becoming increasingly important in both integrated circuit and MEMS technologies...
In this paper a low temperature 'via-last' technology will be presented. This technology has been especially developed for CMOS image sensors wafer level packaging. In the first part of this paper, the design of the TSV will be presented and a first approach of a design rule definition for TSV will be introduced. The alignment strategy will be also presented, and specific patterns to succeed front...
Today 3D integration technology is investigated at every microelectronic device fabrication stage. Semiconductor layers, transistors, wafers and chips are stacked to create new functionalities, enhance device performance or develop innovative systems on a chip. 3D integration technology enables bringing them together on one chip. This can be done either as a sequence of bonding and processing stages...
In this paper a new 'via-first' technology which is compatible with CMOS high temperature steps will be presented. This technology is based on filling high aspect ratio trenches with doped polysilicon and thinning the silicon after active device bonding onto a wafer carrier. The initial morphological requirements are described and different designs of TSV are presented. The complete technology for...
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