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Continuous scaling down NAND FLASH toward below 2Xnm node generation will result in serious Floating Gate (FG) poly depletion due to dopant loss and significantly degrade the cell reliability performance. FG implantation (IMP) before inter-poly-dielectric (IPD) deposition was proposed in this study, but it suffered FG damage and resulted in control gate (CG) void issue. We have successfully minimized...
Thickness variations of ILD CMP induced yield loss at wafer edge is simulated by 3D Sentaurus Interconnect, in order to achieve more authentic condition, we adopt the image contour extraction technique to stream the genuine contact contour gds together with STI, POLY, ML database. The results demonstrates that when the thickness is over 7k at wafer edge, there is no electric current found, and it...
Airborne molecular contamination (AMC) becomes more serious in Fab as the device shrinks and wafer size increases, an economic way for preventing these contaminations is to use N2 purge charging process. The practical FOUP N2 purge engineering is addressed here, which includes the maintenance and management of FOUPs, N2 purge charging flow rate, the design of nozzle, selection of nuzzle material,...
Advanced bright field (BF) inspector have many functions to increase the defect signal, and suppress the background noise. However, it will take much time to fine tune an optimized BF inspection recipe. The aim of this paper is to propose a faster way to select the optimized optics.
Advanced bright field (BF) inspection tool bundles with many powerful features to improve its resolution and sensitivity. However, it usually takes much time for creating an effective monitoring recipe for suppressing the background signal. This paper demonstrates the benefit of BF dark mode inspection for suppressing the interferences of nuisance and pre-layer.
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