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The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities...
The proposed multilayer structures Ni/Ag/M/Au, with blocking metal (M) of Ti and Mo, to form both ohmic and reflective contact for flip chip light emitting diode (FCLED) application, are fabricated. During the annealing process of conventional three-layer Ni/Ag/Au contacts, serious Au intermixing with Ag and Ni was found to result in poor reflectance (63% at the wavelength of 465 nm). It is found...
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