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Enhancement-mode In0.53Ga0.47As n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), with barium zirconate titanate (BZT) and titanium dioxide (TiO2) high-κ materials prepared via the solution–gelation process as gate dielectrics, have been fabricated. The dielectric constants of BZT and TiO2 are 6.67 and 19.3, respectively. The In0.53Ga0.47As MOSFET with TiO2 exhibits better electrical...
Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify...
An InGaP/InGaAs/GaAs metal-oxide- semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves...
The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation...
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