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This paper demonstrates a high frequency power detector with high conversion gain for frequency-shift sensing applications used in biosensing systems. The proposed design comprises an amplitude-to-voltage convertor (AVC), a peak detector, and a bandgap. To increase the operating frequency range, AVC utilizes half of an RMS power detector to attain the power measure of an input signal. Since the input...
This paper introduces a high frequency power detector with high conversion gain for frequency-shift applications. The proposed design comprises an amplitude-to-voltage converter (AVC), a peak detector, and a bandgap. To increase the operating frequency range, AVC utilizes the half of an RMS power detector to attain the power measure of an input signal. Since the input power is converted to a DC voltage...
This paper presents an all-digital built-in self-test (BIST) technique for characterizing the error transfer function of RF PLLs. This BIST scheme, with on-chip stimulus synthesis and response analysis completely done in the digital domain, achieves high-accuracy characterization and is applicable to a wide range of PLL architectures. For the popular sigma-delta fractional-N RF PLLs, the added circuitry...
A three-dimensional (3D) CMOS imager constructed by stacking a pixel array of backside illuminated sensors, an analog-to-digital converter (ADC) array, and an image signal processor (ISP) array using micro-bumps (ubumps) and through-silicon vias (TSVs) is promising for high throughput applications. However, due to the direct mapping from pixels to ISPs, the overall yield relies heavily on the correctness...
A 300 mV 20 MHz-350 MHz low variation all-digital multiphase dual clock output generator with rapid self-calibration has been designed with UMC 90 nm CMOS technology model. The PVT immunity properties of several classic delay elements in low voltage era have been studied. A low voltage calibration unit is also proposed to reduce the maximum multiphase error no larger than 120 ps when delay-locked...
A 2.4 GHz fully-integrated MISO transceiver consisting of two receivers and one transmitter is implemented in 0.18 mum CMOS technology. To alleviate the cost of external front-end components, the RF transmit/receive (T/R) switch and a power-efficient linear CMOS PA are fully integrated on-chip. It shows 3.5 dB low noise figures in the receivers respectively. Also, the transmitter delivers an average...
A new prototype of sub-harmonic mixer using switched Gm technique is designed and implemented in a standard 0.18 um CMOS technology. By using the PMOS active load and a switched Gm prototype at LO port, the new sub-harmonic mixer can achieve high conversion power gain and still maintain high linearity, and we can alleviate the shortage of the voltage headroom at IF output. In addition, it consumes...
The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.
A fully integrated transmitter front end with on-chip power amplifier (PA) in 0.18 um CMOS technology is presented. The on-chip PA employs dynamic bias technique to reduce power consumption and enhance linearity. In the measurement, it reveals the output PldB of the PA is 26.5 dBm. Also, the transmitter delivers an average power of 17.3 dBm with EVM of -28.1 while drawing 225 mA of DC current (PA...
For the first time, a scalable load balanced Birkhoff-von Neumann TDM switch IC with SERDES interface circuits for high speed networking applications was implemented. Any NtimesN Birkhoff-von Neumann TDM switch could be constructed recursively from the designed TDM switch IC to achieve switching capacity of hundred gigabits per second or higher. The TDM switch IC contained a digital 8times8 TDM switch...
This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and...
The fabrication of a micro-machined microwave switch using the standard 0.35mum CMOS process and the post-process by wet etching without extra mask is implemented in this work. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch approximates to 17 V. The...
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