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Demands for highly-fUnctional flexible nonvolatile memories are quite increasing to realize future flexible consumer electronic systems. We demonstrated and fabricated the ferroelectric-based memory thin-film transistors (Fe-MTFTs) on flexible poly(ethylene naphthalate) substrates using organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and oxide semiconductor...
The effects of ALD deposition temperature for the HfO2 gate insulator (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature was varied to 200, 225, and 250 °C. The HfO2 thin film prepared at 250 °C showed lowest leakage current density of 9.6×10−9 A/cm2 and highest dielectric constant of 23. The IGZO TF Ts using the HfO2 GI...
We report a vertical-channel oxide thin-film transistor (VTFT) with a channel length of 300 nm. All layers including an In-Ga-Zn-O active channel are prepared by atomic-layer deposition except for source and drain electrodes. Both inorganic and organic materials, SiO2 and polyimide (PI), are introduced as spacer materials and dry etch processes are used to form vertical sidewalls. Nearly vertical...
We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory...
Charge-trap memory thin film transistors employing In-Ga-Zn-O thin films as active channel and charge-trap layers (CTLs) were fabricated and characterized. To optimize process conditions, the design parameters were categorized into two parts. First, the thickness effects of double-layered tunneling oxide were examined and the 5 nm/5 nm configuration was chosen for guaranteeing process window and device...
Scratch defects is occur due to impact drop and friction between the roller and slab in the conventional hot rolling method. The Flying Touch method is one of the proposed methods to improve the scratch defects. Flying Touch method is available to soft touch between the rollers and the slab. Because roller is unfixed and flexible. And Flying Touch method is proposed synchronization of the rollers'...
We proposed a transparent and/or flexible charge-trap-type memory thin film transistors (CTM-TFTs) with a top-gate structure composed of zinc-oxide (ZnO) charge-trap and In-Ga-Zn-O (IGZO) active channel layers. The memory on/off ratio higher than 7-orders-of magnitude was obtained for the fully transparent CTM-TFTs fabricated on glass substrates when the width and amplitude of program pulses were...
In this paper, the estimation method of reaction force for electro-hydraulic servo system for movement is discussed. This reaction force estimation method is based on sliding perturbation observer that is robust observer technique. Before estimating reaction force, the modeling of electro-hydraulic servo system is processed. Before the fine modeling parameters of electro-hydraulic servo system, modeling...
In the hot rolling process, scratches are caused by immense friction between the rollers and the steel plate, and this defect reduces the quality of steelworks. To solve this problem, a flying touch method was proposed, which can control the gap between rollers for reducing scratches in hot rolling process. In a flying touch method, it is important that the gap between the rolling rolls can be control...
We investigated the effects of controlling the relative positions of Al dopant layers on the device characteristics of the thin-film transistors using Al-doped ZnO (AZO) active channels for the first time. The position control was accomplished by the cycle designs of atomic-layer deposition process for the AZO channels. When the Al dopant layer was positioned at relative bottom sides of the channel,...
The effects of barrier layers and channel compositions on the device performances including the bending characteristics and bias-stress stabilities were investigated for the flexible In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). The IGZO TFTs fabricated on the PEN treated with inorganic/organic double-layered barrier layer showed superior properties under the bending situation even at a curvature...
This paper deal with an identification of a single rod hydraulic cylinder system and its motion control. Modeling and control of the electro-hydraulic servo system are difficult because system contains nonlinear elements. Therefore, this paper use the signal compression method to obtain the dynamic characteristic and apply the sliding mode control with sliding perturbation observer(SMCSPO) for robust...
The robotic surgery, which is the one of the major robotic technology, has some problems that a surgeon checks vision and sound information thought the surgical process. In order to solve this limited information, the haptic function is necessary. But it requires much more information through various sensors to haptic realization. However, because of the special environment inside human body, it is...
Reaction force estimation is the major challenge of surgical robotic procedures. In previous research, sliding mode control with sliding perturbation observer (SMCSPO) is used to estimate the reaction force in the sensor-less system. Moreover, a fuzzy-SPO method is also proposed to separate actual reaction force in presence of dynamic disturbances. However, in both those research, some physical constraints...
A mid-annealing process was proposed to control both parameters of the carrier concentration and crystal orientations for the atomic-layer deposited Al-doped ZnO (AZO) thin films. It was defined as an additional thermal treatment in oxygen ambient for the prepared AZO films right after the channel area patterning process during the TFT fabrication procedures. It was confirmed that the electrical conductivity...
Fully-transparent amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with double-gate (DG) configuration were demonstrated. Each top-gate (TG) and bottom-gate (BG) TFT fabricated with single gate-stack structure was found to exhibit sound device characteristics. The benefits of DG configuration, such as improved current drivability and threshold voltage tunability, were also well confirmed...
Top-gate oxide thin-film transistors (TFTs) with the gate-stack structure composed of solution-processed poly-4-vinylphenol (PVP) organic gate insulator (GI) and Al-Zn-Sn-O (AZTO) active channel were fabricated and characterized. It was confirmed that the electrical properties of PVP films were seriously degraded by developer and/or resist stripper during the photolithography performed for the patterning...
The effect of aluminum and Indium composition on the negative bias-illumination-stress (NBIS) stability was investigated for the In-Zn-O (IZO) and Al-In-Zn-O (AIZO) thin-film transistors (TFTs). The fabricated TFTs with top-gate bottom-contact structure showed distinct variations in the threshold voltage shift (ΔVth) under the NBIS at blue wavelength with changing the channel layer composition. The...
When using commercialized robot assisted laparoscopic such as Da Vinci, surgeon has met some problem to depend only on the information by visual feedback. To solve this problem, haptic function is required. In order to realize the haptic teleoperation system, force feedback and bilateral control system are needed. The previous researches showed that the perturbation value estimated by sliding perturbation...
In a surgery using a commercialized robot for laparoscopic surgeries such as Da Vinci, a surgeon performs a surgery only depending on visuals by cameras. As contact reaction force between a robot instrument for surgeries and organs during this kind of surgery, problems such as organ impairment, etc. occurs. In order to resolve this kind of problem, this paper introduces possibility of haptic function...
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