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A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of transistor and nonvolatile memory can be performed. Al-doped ZnO was employed for the active channel of the TFT as well as for the resistive-change material of the memory device. Multilevel memory operations could be realized by controlling the number of conducting filaments...
We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory...
We investigated the effects of controlling the relative positions of Al dopant layers on the device characteristics of the thin-film transistors using Al-doped ZnO (AZO) active channels for the first time. The position control was accomplished by the cycle designs of atomic-layer deposition process for the AZO channels. When the Al dopant layer was positioned at relative bottom sides of the channel,...
A mid-annealing process was proposed to control both parameters of the carrier concentration and crystal orientations for the atomic-layer deposited Al-doped ZnO (AZO) thin films. It was defined as an additional thermal treatment in oxygen ambient for the prepared AZO films right after the channel area patterning process during the TFT fabrication procedures. It was confirmed that the electrical conductivity...
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