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The ever increasing demand for ultralow power electronics has propelled the exploration of novel multiferroics for realizing voltage control of magnetism in an energy efficient manner. Epitaxial multiferroic heterostructures, possessing a strong lattice-coupled mechanical interface and allowing an electric field (E-field) significantly modulating spin, charge, lattice, and orbital order parameters,...
In this paper, a design method of optimal proportional-integral (PI) controller with dead-zone link is presented for low-order processes with time delay. Closed-loop system is the nonlinear control system with the dead-zone link. The feedback system can be equivalently transformed into the linear switch system (LSS) or autonomous switch system (ASS). The optimal control problem is equivalently transformed...
Based on three-dimensional (3D) Fourier heat flow equation and numerical simulation, we investigated thermal crosstalk of resistive switching memory in 3D crossbar structure for the first time. Our results show that the transient thermal effect will dominate reset process. With the decrease of RS device size, the thermal crosstalk would remarkably deteriorate the retention of RS memory device and...
The digital substation and the implementation of IEC61850 are fundamental to the future of protection relays. The IEC61850 standard, "Communication Networks and Systems in Substation", provides the basis for the communication system for the digital sub-station's protection and control schemes. Section 9–2 defines the Ethernet based communication network providing data transfer between primary...
A methodology of analysis of stability and performance of variable structure (VS) PID controllers is proposed. It is proposed that stability of the VS system can be approximately assessed via the describing function method. The describing function of the VS PID controller is derived. It is shown that the system with the VS PID controller is quasilinear. Tuning rules for VS PI controller for the level...
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
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