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Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1 THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky...
In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency...
Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.
Ge-pin-photodiodes monolithically integrated on strain-relaxed buffers are presented. For easy on-wafer testing mesa-type photodiodes are designed for vertical light incidence. At the telecommunication wavelengths of 850 nm, 1298 nm and 1550 nm zero-bias external quantum efficiencies of 23%, 16% and 2.8% are measured. An optoelectronic 3 dB-bandwidth, limited by the RC-product, has been measured up...
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