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We been developing a micro spectrometer with embedded system customizable for high sensitive 64 pixels QDs-QW photodetectors linear array. Based on silicon substrate through silicon via (TSV) technology, the readout circuit chip and the photodetector linear array have been packaged on 2.5D/3D integration. The high-speed data acquisition and processing analysis unit system have designed and optimize...
In this paper we report the novel assembly method of a biosensor unit based on 64 pixel photodetector array with a proprietary semiconductor quantum dots (QDs) quantum well (QW) hybrid structure. There is significantly lower dark current for optimized high sensitivity detector. The capacitive trans-impedance amplifier (CTIA)-correlated double sampling (CDS) readout circuit can readout weak optical...
We have developed a micro spectrometer with 64 pixel GaAs base n-i-dot-in-well-i-n photo detector linear array. The physical model has established by its current-voltage, capacitance-voltage and Capacitance to frequency relationship. The model could be easily integrated with the readout circuit for special readout design optimization to realize the wide wavelength range under different radiation (especially...
A novel quantum effect photodetector array consisted of AlAs/GaAs/InGaAs/GaAs/InAs/ quantum-dots in quantum-well hybrid structure has been tested. It showed a wide response wavelength range from 400nm to 1000nm. The low threshold voltage (−0.8V) and the high responsibility (10A/W) at 77K made it a good choice for optical detection. A custom-made capacitor feedback transimpendance amplifier (CTIA)...
High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors...
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