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Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to I/sub b//sup 2/, and the 1/f noise from majority carrier transport through polysilicon grain boundaries...
The current gain ( beta ) increase of n-p-n transistors induced by forward current stress is investigated. The mechanism of beta increase is identified as electromigration of atomic hydrogen in polysilicon by high density current, and its subsequent passivation of silicon dangling bonds at the poly/monosilicon interface and poly grain boundaries. The hydrogen passivation results in a reduction of...
A novel bipolar isolation structure with capability of significantly reducing collector-base capacitance and base resistance is presented. A silicon-on-insulator (SOI) region surrounding the collector opening is used to minimize the collector window width, and to increase the thickness of the extrinsic base contact layer for a given device topography. This partial-SOI isolation structure can be combined...
The scaling limits of nonplanar polysilicon emitters are studied by fabricating and measuring NPN transistors with emitter depths between 10 nm and 25 nm, with emitter widths down to 0.2 μm, and with an epitaxial base as narrow as 50 nm. Excellent device characteristics can be achieved for an emitter depth of 25 nm. Transistors with shallower emitters are degraded by an arsenic depletion at...
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