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An E-mode GaN MIS-HEMTs using multilayer La2O3/HfO2 as gate insulator is investigated for high power application. The multilayer La2O3/HfO2 composite oxide transformed to HfLaOx amorphous phase with low density of interface traps and border traps after post deposition annealing (PDA) at 6000C as judged from the C-V characteristics of the HfLaOx/GaN MOSCAP. The device exhibits a low ON-resistance of...
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
We demonstrate simultaneous NMOS and PMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.
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