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We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.
Over the last 25 years has seen an unprecedented increase in the growth of phonic components based on semiconductor and solid-state lasers, glass and polymer based optical fibres, and organic LEDs. Emerging technology for component engineering must embed dissimilar materials based devices into an integrated form which is more efficient. In this article, we demonstrate techniques for overcoming the...
In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image...
A 1.55 μm VECSEL with a hybrid metal-GaAs/AlAs metamorphic mirror optimized for high power room temperature operation has been assembled with a fast InGaAsN/GaAsN saturable absorber mirror (SESAM) to generate mode-locked pulses at a frequency of 2 GHz. Nearly Fourier transform-limited pulses are obtained at 25 °C avoiding the need for water cooling, with a pulsewidth <; 2 ps. The RF linewidth of...
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