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In this paper, we demonstrate, for the first time, 3-D Monolithic integration of short-channel replacement metal gate InGaAs n-FinFETs on fully-depleted silicon-on-insulator CMOS, with TiN/W interlayer contacts. Top layer InGaAs nFETs feature raised source–drain and bottom layer CMOS has Si raised source–drain for nFETs, SiGe raised source–drain for pFETS, implants, silicide, and TiN/W plug contacts...
Advanced CMOS nodes target high-performance at lower supply voltage. High-mobility III-V channel materials have the potential to meet this target. Although III-V materials such as InGaAs are beneficial for nFET channels, SiGe (or Ge) provides better hole mobility and is more suited for pFET channels. Therefore, a InGaAs/SiGe hybrid CMOS technology is being pursued for scaled nodes. There are significant...
We demonstrate, for the first time, the 3D Monolithic (3DM) integration of In0.53GaAs nFETs on FDSOI Si CMOS featuring short-channel Replacement Metal Gate (RMG) InGaAs n-FinFETs on the top layer and Gate-First Si CMOS on the bottom layer with TiN/W inter-layer contacts. State-of-the-art device integration is achieved with the top layer InGaAs utilizing raised source drain (RSD) and the bottom layer...
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