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Through silicon vias are key components in 2.5D and 3D microelectronic packaging. Deep silicon etching is the critical step in fabrications of TSVs. Uniform metal-assisted chemical etching (MaCE) has been considered as a promising method to the conventional deep reaction ion etching for deep silicon etching. In this paper, we demonstrated that the uniform MaCE method is capable of fabricating vertical...
This paper explores silicon nanowire technology for ultrathin high-density capacitors, supercapacitors and batteries. Development of such thin power components on glass or silicon will allow integration with other passive components as well as actives such as decoupling capacitors close to locic Ics to form 3D integrated passive and active devices (3D IPACs) that could then be surface-assembled onto...
A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality...
Si surface modification is of great significance for a variety of applications, such as hydrophobic treatment, surface passivation of photovoltaic devices, and microelectronic devices. In this study, a facile way of forming superhydrophobic surfaces is reported that uses KOH etching and Au assisted HF/H2O2 etching of silicon wafers. The Au layer was deposited onto a pyramidal silicon wafer via e-beam...
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