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We demonstrate the potential of InAs/InP quantum dash-based phase modulator for broadband (≫70 nm) applications at 1.55 μm. In recent years, there have been great efforts in the development of self assembled quantum dot nanostructures. This material system is expected to offer unique optoelectronic properties owing to the carrier confinement in the three space dimensions. Much works have been devoted...
We have studied the spin dynamics in nonintentionally doped and n-modulation doped self-organized InAs/GaAs quantum dots (QD) by time-resolved photoluminescence. Under strictly resonant excitation, we demonstrate that the carrier spins in these nanostructures are totally frozen on the neutral or charged exciton lifetime scale. In addition, we show that the spin state of the resident electron in n-doped...
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