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In this paper, we study the source drain Gaussian doping profile of strained In0.53Ga0.47AS based high electron mobility FinFET transistor (HEMT). The Gaussian doping profile is created using Pearson distribution model by setting the values of the gamma and beta parameters (the function characterizing the amorphous part of the profile). The ON current increases exponentially and the step doping also...
Waste management is a pressing issue in the urban, industrial and rural areas of the world. Improper handling of these wastes leads to compounded problems to the environment. In this paper, using the concept of automation we propose a spot segregation unit that effectively separates various categories of refuses generated by the municipalities. Using this system, we aim to minimize the manual intervention...
An adhesive exopolysaccharide (EPS), from a biofilm forming marine strain ADE-0-1, identified as Bacillus megaterium using conventional microbiological test and 16S rDNA analysis, contained 75% carbohydrate, 17% uronic acid and 0.00125% pyruvate on dry weight basis as per colorimetric determinations and found anionic in nature by ion exchange chromatography. Paper chromatographic and HPLC analysis...
Background Present research communicates the role of Eisenia fetida in converting pulp and paper mill sludge into valuable products by removing the high concentration of different chlorophenols and metals present in the sludge. Results Pulp and paper mill sludge was toxic to Eisenia fetida and therefore, it was mixed with composted material in...
In this paper we propose a novel JL transistor with triple metal gate structure (JLTM). The DC, analog and RF performance parameters of the proposed JLTM have been compared with one standard JL transistor with single metal structure (JLDM). The DIBL and SS of JLTM reported are 0.0059 and 61.838 mV/dec respectively. Analog performance parameters gm, gm/Id, gm/gd has also been reported to be improved...
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