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In this paper we report on results of an optimized growth process of In 0.53 Ga 0.47 As on exactly (001)-oriented Si substrates by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE). The crystalline perfection of the InGaAs as well as an intermediate layer sequence consisting of GaAs, InP and an InGaAs/InP superlattice was examined by transmission...
Thin buffer layers for strongly mismatched heteroepitaxy of GaAs and InP on Si were investigated with respect to their structural characteristics in a scanning electron microscope (SEM). A novel technique, which is based on energy-dispersive X-ray spectrometry (EDX), was utilized for thickness measurement. With GaAs thicknesses were determined in the range from several 1 μm down to 10 nm. Their accuracy...
The fabrication process of InGaAs metal-semiconductor-metal (MSM) photodetectors on lattice-mismatched (001)Si substrates is described. The Schottky-barrier is enhanced by a p+n-InP double layer. The dark-current densities measured are comparable to those of lattice-matched devices on InP. Their distribution shows the good reproducibility of the fabrication process. From the temperature and voltage...
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