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This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces...
A simple statistical behavior ring-delay model is proposed for the first time. Based on this model, the correlation between FETs' DC drive currents and AC performance (e.g., delay of ring oscillators) under different scenarios in 32 nm process technology are systematically studied. The extracted model coefficients trend helps to gain deeper insight on the nodal voltage waveform and impacts of the...
For nFET, mechanism of stress memorization technique (SMT) has been investigated. It showed, for the first time, that SMT effect on nFET improvement is not only from poly gate, but also from Si at extension area. For pFET, a novel low cost technique to improve device performance by enhanced stress proximity technique (eSPT) with Recessed SD (ReSD) has been demonstrated for the first time. pFET performance...
The device characteristics and manufacturability of ultra-thin oxynitride have been systemically studied in this paper for CMOS applications. We have found that the transistor with plasma oxynitride gate dielectrics gives better pFET performance in terms of drive current, mobility, threshold voltage and leakage current as compared to the one with thermal oxynitride. For nFET, the performance for transistors...
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