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A physically based compact mobility model for organic thin-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy ($E_{F}$ ) movement in the bandgap ($E_{g}$ ) is presented. Mobility in the localized and extended energy states predicts the drain-current behavior in the weak and strong accumulation operations of OTFTs, respectively. A hopping mobility model as a function of the...
A physical compact charge carrier mobility model for undoped-body organic thin-film transistors (OTFTs) based on an analysis of the bias-dependent Fermi-energy movement in the band gap is reported. Mobility in localized- and extended-energy states predicts the current transport in week- and strong-inversion regimes, respectively. A hopping mobility model as a function of surface potential is developed...
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