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This paper presents a non linear model of HEMT device which operate in multi-bias conditions, that is to say in class-AB, class-B, class-C, class-D and class-S. The model was derived from pulsed I(V), pulsed S parameters and large signals measurements. The aim is to provide to the designers a single model that can be used whatever the operating class, whatever the application referred. It should be...
This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HBT) intended for CAD. The first section describes the model topology and sets the implemented equations that allow to take into account of the physical phenomena. The model also integrates scaling rules function of emitter length (W) and number of fingers (N). For the thermal aspect, low frequency impedance...
This paper presents a dual approach for a coherent determination and validation of HBT thermal impedance. This study relies both on an experimental characterization method and a 3D finite element simulation approach. The first section reminds briefly the experimental approach. The second section describes the 3D device modeling used for the physic-based thermal simulations. Thereafter, details on...
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