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Nowadays, fan-out package is regarded as one of the latest and most potential technologies because it possesses lower cost, thinner profile, and better electrical performance and thermal performance. However, thermally induced warpage in the molding process is a critical issue due to the larger wafer or panel size, the shrinkage of epoxy mold compound (EMC) during the curing stage, and the mismatch...
Whisker formation mechanism has been widely investigated for recent decades since its great influence on degrading the reliability of the electronic devices. In our work, effect of current stressing on whisker growth in Cu/Sn3.8Ag0.7Cu/Cu and Cu/Sn58Bi/Cu solder joints was investigated. Results show that after current stressing for a long time, many whiskers are observed in some local regions at the...
Whisker formation mechanism has been widely investigated for recent decades since its great influence on degrading the reliability of the electronic devices. In our work, effect of current stressing on whisker growth in Cu/Sn3.8Ag0.7Cu/Cu and Cu/Sn58Bi/Cu solder joints was investigated. Results show that after current stressing for a long time, many whiskers are observed in some local regions at the...
Through silicon vias (TSVs) are regarded as one of the key enabling component to achieve three-dimensional (3D) integrated circuit (IC) functionality. In this paper, we present the investigation on TSV protrusion and stress at different annealing conditions tested by means of optical profiler and high efficiency micro-Raman microscopy. Finite element method is utilized to model and simulate the thermo-mechanical...
In this study, a 3D package module based on flexible substrate is proposed. In order to improve the thermo-mechanical reliability of the 3D package module, the simulation of the key manufacture process is more and more important. The key manufacture processes of the 3D substrate package module mainly include 2D chip assembly, under-filling, 3D substrate folding, die-attaching, molding, and ball grid...
Due to the differences in the thermal expansion coefficients of copper and silicon, a large thermal stress develops at the interface between a Cu-filled via and both the insulation layer and the surrounding silicon when the structure is subjected to temperature loading. In this paper four TSV geometries are considered in an effort to investigate the role of via geometry on stress relief. Thermo-mechanical...
The reliability problem and the thermal management problem of active embedded component into organic substrate becomes a bottleneck restricting development. On the one hand, these paper overviews the thermal management features of the technology, the modeling of the thermal management and the application of thermal methods. It does the cooling and the thermal stress simulation analysis for typical...
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